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HAT2197R
Silicon N Channel Power MOS FET Power Switching
REJ03G0061-0200Z Rev.2.00 Apr.02.2004
Features
* * * * * High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 5.3 m typ. (at VGS = 10 V)
Outline
SOP-8
8 5 76
56 7 8 DD D D
3 12
4
4 G
1, 2, 3 Source 4 Gate 5, 6, 7, 8 Drain
SSS 123
Rev.2.00, Apr.02.2004, page 1 of 7
HAT2197R
Absolute Maximum Ratings
(Ta = 25C)
Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel to ambient thermal impedance Channel temperature Storage temperature Symbol VDSS VGSS ID ID(pulse)Note1 IDR IAP Note 2 EAR Note 2 Pch Note3 ch-a Note3 Tch Tstg Ratings 30 20 16 128 16 16 25.6 2.5 50 150 -55 to +150 Unit V V A A A A mJ W C/W C C
Notes: 1. PW 10 s, duty cycle 1% 2. Value at Tch = 25C, Rg 50 3. When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW 10s
Electrical Characteristics
(Ta = 25C)
Item Drain to source breakdown voltage Gate to source leak current Zero gate voltage drain current Gate to source cutoff voltage Static drain to source on state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Gate Resistance Total gate charge Gate to source charge Gate to drain charge Turn-on delay time Rise time Turn-off delay time Fall time Body-drain diode forward voltage Body-drain diode reverse recovery time Notes: 4. Pulse test Symbol Min V(BR)DSS IGSS IDSS VGS(off) RDS(on) RDS(on) |yfs| Ciss Coss Crss Rg Qg Qgs Qgd td(on) tr td(off) tf VDF trr 30 -- -- 1.0 -- -- 22 -- -- -- -- -- -- -- -- -- -- -- -- -- Typ -- -- -- -- 5.3 6.8 38 2650 610 190 1.2 18 7.5 4.2 10 25 45 4.2 0.80 30 Max -- 0.1 1 2.5 6.7 9.9 -- -- -- -- -- -- -- -- -- -- -- -- 1.04 -- Unit V A A V m m S pF pF pF nC nC nC ns ns ns ns V ns Test Conditions ID = 10 mA, VGS = 0 VGS = 20 V, VDS = 0 VDS = 30 V, VGS = 0 VDS = 10 V, I D = 1 mA ID = 8 A, VGS = 10 V Note4 ID = 8 A, VGS = 4.5 V Note4 ID = 8 A, VDS = 10 V Note4 VDS = 10 V VGS = 0 f = 1 MHz VDD = 10 V VGS = 4.5 V ID = 16 A VGS = 10 V, ID = 8 A VDD 10 V RL = 1.25 Rg = 4.7 IF = 16 A, VGS = 0 Note4 IF = 16 A, VGS = 0 diF/ dt = 100 A/ s
Rev.2.00, Apr.02.2004, page 2 of 7
HAT2197R
Power vs. Temperature Derating 4.0
Pch (W) I D (A)
Maximum Safe Operation Area 500
10 s
Test Condition : When using the glass epoxy board (FR4 40x40x1.6 mm), PW < 10 s 3.0
100
DC
10
10
PW
Op era tio
=1
1m
0
s
Channel Dissipation
Drain Current
0m
s
2.0
n(
s
1
PW
1.0
Operation in this area is 0.1 limited by R DS(on) Ta = 25C 1 shot Pulse
N < 1 ote 0s 4 )
0
50
100
150 Ta (C)
200
Ambient Temperature
0.01 0.1 0.3 100 1 3 10 30 Drain to Source Voltage V DS (V) Note 4 : When using the glass epoxy board (FR4 40x40x1.6 mm) Typical Transfer Characteristics 20 V DS = 10 V Pulse Test
(A) ID Drain Current
Typical Output Characteristics 20 10 V 2.8 V
I D (A)
Pulse Test 2.6 V 16
16
12
Drain Current
2.5 V
12 Tc = 75C 25C 4 -25C
8
VGS = 2.4 V
8
4
0
2 4 6 Drain to Source Voltage
8 10 V DS (V)
0
1 2 3 Gate to Source Voltage
5 4 V GS (V)
V DS(on) (mV)
Drain to Source Saturation Voltage vs. Gate to Source Voltage 200 Pulse Test
160
Drain to Source On State Resistance R DS(on) (m )
Static Drain to Source on State Resistance vs. Drain Current 100 Pulse Test 50 20 VGS = 4.5 V 10 5 2 1 1 10 100 Drain Current I D (A) 1000
Drain to Source Voltage
120
I D = 20 A
80 10 A 40 5A 0 4 8 12 Gate to Source Voltage 16 V GS (V) 20
10 V
Rev.2.00, Apr.02.2004, page 3 of 7
HAT2197R
Static Drain to Source on State Resistance vs. Temperature 12 Pulse Test 10 I D = 20 A Forward Transfer Admittance vs. Drain Current
Static Drain to Source on State Resistance R DS(on) (m )
Forward Transfer Admittance |yfs| (S)
1000 Tc = -25C 100
8 V GS = 4.5 V 6 10 V 4 2 -25
5, 10 A
10 25C 1 75C V DS = 10 V Pulse Test 0.1 0.3 1 3 10 30 100
5 A, 10 A, 20 A
0 25 50 75 100 125 150 Case Temperature Tc (C) Body-Drain Diode Reverse Recovery Time
Drain Current I D (A) Typical Capacitance vs. Drain to Source Voltage 10000 3000 1000 300 100 30 10 0 5 10 15 20 Crss VGS = 0 f = 1 MHz 25 30 Ciss
100
Reverse Recovery Time trr (ns)
50
Capacitance C (pF)
Coss
20 di/dt = 100 A/s VGS = 0, Ta = 25C 1 10 100 Reverse Drain Current I DR (A)
10 0.1
Drain to Source Voltage V DS (V) Switching Characteristics 20 1000
Dynamic Input Characteristics
V DS (V)
50
Switching Time t (ns)
40
Drain to Source Voltage
V DD = 25 V 10 V 5V
16 V GS 12
V GS (V)
I D = 16 A
V GS = 10 V , VDS = 10 V Rg = 4.7 , duty < 1 % 100 tr
30 V DS
Gate to Source Voltage
t d(off)
20
8
t d(on) 10 tf 1 0.1 1 Drain Current 10 I D (A) 100
10
V DD = 25 V 10 V 5V 16 32 48 64 Gate Charge Qg (nC)
4 0 80
0
Rev.2.00, Apr.02.2004, page 4 of 7
HAT2197R
Reverse Drain Current vs. Source to Drain Voltage
Repetitive Avalanche Energy EAR (mJ)
Maximum Avalanche Energy vs. Channel Temperature Derating 50 I AP = 16 A V DD = 15 V duty < 0.1 % Rg > 50
20
Reverse Drain Current I DR (A)
16
10 V 5V V GS = 0 V
40
12
30
8
20
4 Pulse Test 0 0.4 0.8 1.2 1.6 2.0 Source to Drain Voltage V SD (V)
10 0 25
50 75 100 125 150 Channel Temperature Tch (C)
Normalized Transient Thermal Impedance vs. Pulse Width 10
Normalized Transient Thermal Impedance s (t)
1
D=1 0.5
0.1
0.2 0.1 0.05
0.01
0.02
0.01
1s h p ot uls e
ch - f(t) = s (t) x ch - f ch - f = 83.3C/W, Ta = 25C When using the glass epoxy board (FR4 40 x 40 x 1.6 mm)
PDM PW T
0.001
D=
PW T
0.0001 10
100
1m
10 m
100 m
1
10
100
1000
10000
Pulse Width PW (s)
Rev.2.00, Apr.02.2004, page 5 of 7
HAT2197R
Avalanche Test Circuit Avalanche Waveform EAR = 1 2 L * IAP2 * VDSS VDSS - V DD
V DS Monitor
L I AP Monitor
V (BR)DSS I AP VDD ID V DS
Rg Vin 15 V
D. U. T
50 0 VDD
Switching Time Test Circuit Vin Monitor Rg D.U.T. RL V DS = 10 V Vin Vout Vin 10 V Vout Monitor
Switching Time Waveform 90% 10% 10% 90% td(on) tr 90% td(off) tf 10%
Rev.2.00, Apr.02.2004, page 6 of 7
HAT2197R
Package Dimensions
As of January, 2003
Unit: mm
4.90 5.3 Max 5 8
1
4
3.95
*0.22 0.03 0.20 0.03
1.75 Max
0.75 Max
6.10 - 0.30
+ 0.10
1.08 0 - 8
0.14 - 0.04
+ 0.11
1.27
+ 0.67 0.60 - 0.20
*0.42 0.08 0.40 0.06
0.15 0.25 M
*Dimension including the plating thickness Base material dimension Package Code JEDEC JEITA Mass (reference value) FP-8DA Conforms -- 0.085 g
Ordering Information
Part Name HAT2197R-EL-E Quantity 2500pcs Shipping Container Taping
Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of production before ordering the product.
Rev.2.00, Apr.02.2004, page 7 of 7
Sales Strategic Planning Div.
Keep safety first in your circuit designs!
Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan
1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of nonflammable material or (iii) prevention against any malfunction or mishap. Notes regarding these materials 1. These materials are intended as a reference to assist our customers in the selection of the Renesas Technology Corp. product best suited to the customer's application; they do not convey any license under any intellectual property rights, or any other rights, belonging to Renesas Technology Corp. or a third party. 2. Renesas Technology Corp. assumes no responsibility for any damage, or infringement of any third-party's rights, originating in the use of any product data, diagrams, charts, programs, algorithms, or circuit application examples contained in these materials. 3. All information contained in these materials, including product data, diagrams, charts, programs and algorithms represents information on products at the time of publication of these materials, and are subject to change by Renesas Technology Corp. without notice due to product improvements or other reasons. It is therefore recommended that customers contact Renesas Technology Corp. or an authorized Renesas Technology Corp. product distributor for the latest product information before purchasing a product listed herein. The information described here may contain technical inaccuracies or typographical errors. Renesas Technology Corp. assumes no responsibility for any damage, liability, or other loss rising from these inaccuracies or errors. Please also pay attention to information published by Renesas Technology Corp. by various means, including the Renesas Technology Corp. Semiconductor home page (http://www.renesas.com). 4. When using any or all of the information contained in these materials, including product data, diagrams, charts, programs, and algorithms, please be sure to evaluate all information as a total system before making a final decision on the applicability of the information and products. Renesas Technology Corp. assumes no responsibility for any damage, liability or other loss resulting from the information contained herein. 5. Renesas Technology Corp. semiconductors are not designed or manufactured for use in a device or system that is used under circumstances in which human life is potentially at stake. Please contact Renesas Technology Corp. or an authorized Renesas Technology Corp. product distributor when considering the use of a product contained herein for any specific purposes, such as apparatus or systems for transportation, vehicular, medical, aerospace, nuclear, or undersea repeater use. 6. The prior written approval of Renesas Technology Corp. is necessary to reprint or reproduce in whole or in part these materials. 7. If these products or technologies are subject to the Japanese export control restrictions, they must be exported under a license from the Japanese government and cannot be imported into a country other than the approved destination. Any diversion or reexport contrary to the export control laws and regulations of Japan and/or the country of destination is prohibited. 8. Please contact Renesas Technology Corp. for further details on these materials or the products contained therein.
RENESAS SALES OFFICES
Renesas Technology America, Inc. 450 Holger Way, San Jose, CA 95134-1368, U.S.A Tel: <1> (408) 382-7500 Fax: <1> (408) 382-7501 Renesas Technology Europe Limited. Dukes Meadow, Millboard Road, Bourne End, Buckinghamshire, SL8 5FH, United Kingdom Tel: <44> (1628) 585 100, Fax: <44> (1628) 585 900 Renesas Technology Europe GmbH Dornacher Str. 3, D-85622 Feldkirchen, Germany Tel: <49> (89) 380 70 0, Fax: <49> (89) 929 30 11 Renesas Technology Hong Kong Ltd. 7/F., North Tower, World Finance Centre, Harbour City, Canton Road, Hong Kong Tel: <852> 2265-6688, Fax: <852> 2375-6836 Renesas Technology Taiwan Co., Ltd. FL 10, #99, Fu-Hsing N. Rd., Taipei, Taiwan Tel: <886> (2) 2715-2888, Fax: <886> (2) 2713-2999 Renesas Technology (Shanghai) Co., Ltd. 26/F., Ruijin Building, No.205 Maoming Road (S), Shanghai 200020, China Tel: <86> (21) 6472-1001, Fax: <86> (21) 6415-2952 Renesas Technology Singapore Pte. Ltd. 1, Harbour Front Avenue, #06-10, Keppel Bay Tower, Singapore 098632 Tel: <65> 6213-0200, Fax: <65> 6278-8001
http://www.renesas.com
(c) 2004. Renesas Technology Corp., All rights reserved. Printed in Japan.
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